Accurate modeling of Metal/HfO_2/Si capacitors

摘要

In this work, we study the differences caused in the Capacitance-Voltage (C-V) characteristics of MOS devices when SiO_2 is replaced by HfO_2 as the gate dielectric. A self-consistent Schrodinger-Poisson solver has been developed to include the effects of quantum confinement and the influence of different parameters such as the effective mass, barrier height, and dielectric constant (κ) of the gate insulator material. Two different devices are considered: A Double Gate MOSFET and a Surrounding Gate Transistor. The validity of the Equivalent Oxide Thickness (EOT) is studied.