On pseudomagnetoresistance in graphene junctions

摘要

Using bilayer-graphene (BG), monolayer-graphene (MG), and hydrogenated-bilayer-graphene (hBG), we study the performance of three different pseudospinvalve (PSV) junctions: (1) BG-BG, (2) MG-BG, and (3) hBG-BG, modulated by vertical electric-field. Although pseudomagnetoresistance (PMR) of nearly 100 ％ at zero temperature could be obtained for the BG-BG structure, this PMR decreases rapidly as temperature increases, and the decrease is worsened with the increasing lateral distance between the required pairs of the electric gates. On the other hand, the decrease is suppressed by using a MG-BG structure, which is less sensitive to temperature and not affected by the electric-gate distance. Unlike our expectation, our results also show that the hBG-BG has the worst performance.