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Andreev reflection in a proximity junction of graphene: Influence of a naturally formed pn junction

机译:石墨烯接近交界处的Andreev反射:天然形成的pn结的影响

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We theoretically study the electron transport in a proximity junction made by partially covering a graphene sheet with a bulk superconductor. Such a system serves as a normal conductor-superconductor (NS) junction and its electron transport properties are mainly governed by Andreev reflection (AR). In this NS junction, the charge neutrality point (CNP) of graphene must spatially vary as a result of the penetration of excess carriers induced from the superconductor. By taking this into account in the electron-doped case, we calculate the differential conductance G_(NS) of the graphene NS junction. Owing to the variation of the CNP in the uncovered region, a smooth pn junction is naturally formed at the point where the Fermi energy crosses the CNP. The resulting pn junction causes unusual behavior of G_(NS). For example, a resonant peak structure appears in G_(NS) reflecting the fact that quasi-bound states are created by the pn junction.
机译:理论上,通过部分地研究通过部分地覆盖具有散装超导体的石墨烯片的接近连接中的电子传输。这种系统用作正常导体 - 超导体(NS)结,并且其电子传输特性主要由AndreeV反射(AR)管辖。在该NS结中,石墨烯的电荷中性点(CNP)必须在空间上变化,由于过量载体从超导体引起的过量载体的渗透而变化。通过在电子掺杂的情况下考虑到这一点,我们计算石墨烯NS结的差分电导G_(NS)。由于在未涂覆的区域中的CNP的变化,在费米能量交叉CNP的点处自然形成平滑的PN结。得到的PN结引起了G_(NS)的不寻常行为。例如,谐振峰结构出现在G_(ns)中,反映了拟合状态由PN结创建的事实。

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