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首页> 外文期刊>Journal of Computational Electronics >Temperature-dependent crosstalk between adjacent MLGNR interconnects of different dimensions and its impact on gate oxide reliability
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Temperature-dependent crosstalk between adjacent MLGNR interconnects of different dimensions and its impact on gate oxide reliability

机译:不同尺寸的相邻MLGNR互连之间的温度相关串扰及其对栅极氧化物可靠性的影响

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摘要

A comprehensive analysis is carried out herein on the impact of the interconnect geometry with nanoscale dimensions on the crosstalk-induced gate oxide reliability in coupled multilayer graphene nanoribbon (MLGNR) interconnects. Simplified circuit models are used to capture the temperature-dependent phonon scattering at temperatures from 300 to 500 K. Three different cases (case-1, case-2, and case-3) of coupled interconnects with fixed sum of width and spacing (interconnect pitch) but varying width/spacing (w/s) ratio are analyzed, revealing that the coupled interconnect geometry controls the impedance parameters. Functional crosstalk analysis shows that the highest positive noise peak of the victim output over the temperature range from 300 to 500 K is obtained in case-3, where the w/s ratio is maximum. On the other hand, the reverse is true for the time duration of the noise pulse at the far end of the victim line in case-2. Analysis of the dynamic crosstalk then reveals that an average percentage delay of approximately 13.45% is obtained in case-3 with respect to (w.r.t.) case-1, while a marginal difference is found in case-2. In comparison with temperature-independent circuit models, the results obtained using the temperature-dependent circuit models of the coupled MLGNR interconnects show an average relative improvement in the time duration of the noise pulse at the victim output by approximately 39%, 35.6%, and 46.6% in case-1, case-2 and case-3, respectively, for the different lengths. The gate oxide reliability in terms of the average failure rate (AFR) for coupled MLGNR interconnects with different widths and lengths is further investigated. The results show an infinitesimal increment of the AFR with the increase in the width and length of the MLGNR interconnects. Moreover, they reveal that the interconnect geometry in case-3 is more prone to gate oxide failure compared with the other cases.
机译:本文对具有纳米尺寸的互连几何形状对耦合多层石墨烯纳米带(MLGNR)互连中的串扰引起的栅极氧化物可靠性的影响进行了全面分析。简化的电路模型用于捕获300至500 K温度下与温度有关的声子散射。耦合互连的三种不同情况(情况1,情况2和情况3)具有固定的宽度和间距之和(互连)间距/间距(w / s)之比进行了分析,揭示了耦合的互连几何形状控制阻抗参数。功能串扰分析显示,在w / s比最大的情况3中,在300至500 K的温度范围内获得了受害者输出的最高正噪声峰。另一方面,在情况2中,受害线远端的噪声脉冲持续时间相反。然后对动态串扰的分析表明,在情况3中,相对于(w.r.t.)情况1,获得了大约13.45%的平均延迟百分比,而在情况2中发现了边际差异。与温度无关的电路模型相比,使用耦合的MLGNR互连的温度相关的电路模型获得的结果显示,受害者输出端噪声脉冲的持续时间平均平均改善了约39%,35.6%和不同长度的情况1,情况2和情况3分别为46.6%。进一步研究了具有不同宽度和长度的耦合MLGNR互连在平均故障率(AFR)方面的栅极氧化物可靠性。结果显示,随着MLGNR互连的宽度和长度的增加,AFR会无限增加。此外,他们发现,与其他情况相比,情况3中的互连几何形状更容易发生栅极氧化物故障。

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