Modeling and analysis of crosstalk induced overshoot/undershoot effects in multilayer graphene nanoribbon interconnects and its impact on gate oxide reliability

摘要

Crosstalk induced overshoot/undershoot effects in multilayer graphene nano ribbon interconnects (MLGNRs) are investigated with the help of ABCD parameter matrix approach for intermediate level interconnects at both 11 nm and 8 nm technology node. The worst case crosstalk induced peak overshoot voltage for perfectly specular, doped multilayer zigzag GNR interconnects is comparable to that of copper interconnects. The performance of neutral GNR interconnects is better than that of its doped counterpart with respect to peak crosstalk overshoot. But from the perspective of overall overshoot width and overshoot area contribution, perfectly specular, doped MLGNR interconnects outperform all other alternatives. As far as the effective electric field across the gate oxide is concerned, the doped MLGNR interconnects outperform neutral ones and copper interconnects for all the cases. It is estimated that the doped perfectly specular multilayer GNR interconnects have gate oxide failure rates (AFR) of similar to 240x and similar to 790x lesser than copper interconnects for 11 nm and 8 nm technology node respectively. So, from the gate oxide reliability perspective, perfectly specular, doped multilayer zigzag GNR interconnects are great advantageous to copper interconnects for the future integrated circuit technology generations. (C) 2016 Elsevier Ltd. All rights reserved.