Design and Implementation of QCA D-Flip-Flops and RAM Cell Using Majority Gates

摘要

Quantum-dot cellular automata (QCA) is one of the promising technologies that enable nanoscale circuit design with high performance and low-power consumption features. As memory cell and flip-flops are rudimentary for most of the digital circuits, having a high speed, and a less complex memory cell is significantly important. This paper presents novel architecture of D flip-flops and memory cell using a recently proposed five-input majority gate in QCA technology and simulated by QCA Designer tool version 2.0.3. The simulation results show that the proposed D flip-flops and the memory cell are more superior to the existing designs by considering the common design parameters. The proposed RAM cell spreads over an area of 0.12 mu m(2) and delay of 1.5 clock cycles. The proposed level-triggered, positiveegative edge-triggered, and dual edge-triggered D flip-flop uses 14%, 33%, and 21% less area, whereas the latency is 40%, 27%, and 25% less when compared to the previous best design. In addition, all the proposed designs are implemented in a single layer QCA and do not require any single or multilayer wire crossing.