首页> 外文期刊>Journal of Circuits, Systems, and Computers >DESIGN OF LOW POWER TWO-PHASE CMOS BUFFER FOR LARGE CAPACITIVE LOADING APPLICATIONS
【24h】

DESIGN OF LOW POWER TWO-PHASE CMOS BUFFER FOR LARGE CAPACITIVE LOADING APPLICATIONS

机译:大型电容负载应用的低功耗两相CMOS缓冲器设计

获取原文
获取原文并翻译 | 示例

摘要

In this paper, a low power two-phase CMOS buffer with short-circuit power elimination and charge reuse for non-speed-critical large capacitive loading applications is proposed. The short-circuit power eliminating circuit is designed to remove the short-circuit current at the buffer's output, which accounts for the largest portion of the short-circuit power dissipation of the CMOS buffer. The charge reuse circuit is used to reduce the output dynamic power dissipation of the two-phase buffer. Moreover, the overall power dissipation of the proposed buffer is further decreased by optimizing the number of tapered stages and the values of tapered factors in the tapered chains of the short-circuit power eliminating circuit. In order to validate the efficiency of the proposed design, theoretical analysis and simulations with various capacitive loads are conducted using TSMC 0.18-μm 1P6M and UMC advanced 90-nm 1P9M CMOS technologies. The results show that the power dissipation of the proposed two-phase CMOS buffer is 8.6% lower than that of the conventional two-phase CMOS tapered buffer. The power-delay product of the proposed buffer is 2.7% smaller than that of the conventional tapered buffer.
机译:本文提出了一种具有短路功率消除功能和电荷重用功能的低功耗两相CMOS缓冲器,适用于非速度关键型大电容负载应用。短路功率消除电路旨在消除缓冲器输出端的短路电流,该电流占CMOS缓冲器短路功耗的最大部分。电荷重用电路用于减少两相缓冲器的输出动态功耗。此外,通过优化短路功率消除电路的锥形级的数目和锥形链中的锥形因子的值,进一步减少了所提出的缓冲器的总功耗。为了验证所提出设计的效率,使用TSMC0.18-μm1P6M和UMC先进的90-nm 1P9M CMOS技术进行了各种电容负载的理论分析和仿真。结果表明,所提出的两相CMOS缓冲器的功耗比传统的两相CMOS锥形缓冲器的功耗低8.6%。所提出的缓冲器的功率延迟乘积比常规的锥形缓冲器的功率延迟乘积小2.7%。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号