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An Ultra-Low Power Subthreshold CMOS RSSI for Wake-Up Receiver

机译:用于唤醒接收器的超低功耗亚阈值CMOS RSSI

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This paper reports an ultra-low power received signal strength indicator (RSSI) for low frequency (LF) wake-up receiver. Topology theory analysis and subthreshold operation are performed to lower power consumption. Each gain stage of the subthreshold limiting amplifier (LA) employs cascade diode-connected loads to obtain high output impedance while maintaining low power. An offset cancelation circuit with different tail currents, which also operates in the subthreshold region, is employed to reduce the DC offset voltage. Unbalanced source-coupled pairs of subthreshold devices adopted in the full-wave rectification are optimized. A 45 dB input dynamic range and a +/- 1 dB indicating error are achieved at 125 KHz frequency. The prototype occupies an active area of 0.39 x 0.28 mm using CSMC 0.153-pm complementary metal-oxide-semiconductor (CMOS) technology. With a 1.8 V supply voltage, the overall current consumption is only 6 mu A.
机译:本文报告了一种用于低频(LF)唤醒接收机的超低功率接收信号强度指示器(RSSI)。进行拓扑理论分析和亚阈值操作以降低功耗。亚阈值限制放大器(LA)的每个增益级都采用级联二极管连接的负载,以在保持低功耗的同时获得高输出阻抗。具有不同尾电流的失调消除电路也可在亚阈值区域内工作,以降低直流失调电压。优化了在全波整流中采用的不平衡源耦合的亚阈值器件对。在125 KHz频率下可获得45 dB的输入动态范围和+/- 1 dB的指示误差。使用CSMC 0.153-pm互补金属氧化物半导体(CMOS)技术,该原型的有效面积为0.39 x 0.28 mm。电源电压为1.8 V时,总电流消耗仅为6μA。

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