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Design of a CMOS Low-Power Limiting Amplifier with RSSI Integrated Circuit for Low-Frequency Wake-Up Receivers

机译:具有用于低频唤醒接收器的RSSI集成电路的CMOS低功率限制放大器的设计

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This paper presents the circuit level design of a CMOS low power limiting amplifier with received signal strength indicator (RSSI) for low frequency application. The design utilizes a five-stage cascade amplifier with PMOS double diode-connected load for the limiting amplifier and a successive detection log amp for the RSSI structure. DC feedback technique is employed to suppress the DC offset at the output. The proposed circuit is laid out in 0.13 μm CMOS technology, then extracted and simulated. It occupies a minimal active area of 0.0084 mm
机译:本文介绍了具有低频信号接收信号强度指示器(RSSI)的CMOS低功率限制放大器的电路级设计。该设计利用一个具有PMOS双二极管连接负载的五级级联放大器作为限幅放大器,并采用一个连续检测对数放大器进行RSSI结构。采用直流反馈技术来抑制输出的直流偏移。所提出的电路采用0.13μmCMOS技术进行布局,然后进行提取和仿真。占用的最小有效面积为0.0084毫米

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