A Graphical Method for Determination of Mobility Ratio in the Semiconductors from Hall Effect Measurements Only

摘要

A method is presented for the approximate estimation of mobility ratio b=μn/μp from the Hall constant measurements taken in the vicinity of the intrinsic region and in this region itself. It is based on the discussion of a formula giving the Hall constant of a nondegenerate semiconductor at the exhaustion. Examples of these determinations are given; the results obtained show reasonable agreement with others'' estimations.