Influence of Oxygen on the Surface Mobility of Tin Atoms in Thin Films

摘要

Tin films less than 800 Å in thickness deposited on 78°K substrates were found to be continuous at low temperatures but to agglomerate into discontinuous islands upon warming to room temperature. Any stage in the agglomeration process could be stabilized by admitting oxygen at a pressure of 10-4 Torr and warming the film to room temperature in the presence of oxygen. Electrical resistance data indicate the surface mobility of the tin is reduced by the formation of a surface oxide one to two monolayers in thickness and that there is no appreciable diffusion of oxygen into the bulk of the film material.