Reply to ``Comments on `Diffusion in Silicon I‐III and Generation of Excess Vacancies by Motions of Diffusion‐Induced Dislocations' ''

Parker T. J.

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Reply to ``Comments on `Diffusion in Silicon I‐III and Generation of Excess Vacancies by Motions of Diffusion‐Induced Dislocations' ''

机译：回复``关于在硅I-III中扩散以及因扩散引起的位错运动而产生多余空位的评论''

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来源
《Journal of Applied Physics 》 |1970年第1期| 共1页
作者
Parker T. J.;
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作者单位

Department of Physics, Queen Mary College, Mile End Road, London E1, England;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
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专利

1. Diffusion in Silicon. III. Generation of Excess Vacancies at Climbing Diffusion‐Induced Dislocations, and Dislocation‐Enhanced Diffusion in (001) Crystals [J] . Parker T. J. Journal of Applied Physics . 1968 ,第4期

机译：硅中的扩散。三，（001）晶体中由于扩散引起的位错和位错增强的扩散而产生的多余空位
2. Reply to the 'Comment on 'Effects of dislocation mechanics on diffusion-induced stress within a spherical insertion particle electrode'' by F. Yang, J. Mater. Chem. A,2014,2, DOI: 10.1039/c4ta01983k [J] . Pengfei Wei, Jianqiu Zhou, Bingbing Chen Journal of Materials Chemistry, A. Materials for energy and sustainability . 2014 ,第40期

机译：F. Yang，J. Mater对“关于位错力学对球形插入粒子电极内扩散引起的应力的影响的评论”的答复。化学A，2014,2，DOI：10.1039 / c4ta01983k
3. COMMENTS ON THE PAPER OF V. L. GAPONTSEV AND V. M. KOLOSKOV "NONEQUILIBRIUM VACANCY-STIMULATED DIFFUSION (INDUCED DIFFUSION) AS THE MAIN MECHANISM OF ACTIVATED ALLOY FORMATION" [J] . Yu. A. Skakov Metal Science and Heat Treatment . 2007 ,第11a12期

机译：关于V. L. GAPONTSEV和V. M. KOLOSKOV的评论“非平衡空位激发的扩散（诱导扩散）是活性合金形成的主要机理”
4. Diffusion-induced dislocations in highly boron-doped silicon layers used for bulk micromachining a [C] . Florin Gaiseanu, National Institute for Research, Development of Mi crotechnology, Conference on micromachining and microfabrication process technology . 1998

机译：高扩散硼掺杂硅层中的扩散诱导位错，用于体微加工
5. Irradiation induced dislocations and vacancy generation in single crystal yttria stabilized zirconia. [D] . Johnsen, Jill Noel. 2006

机译：辐照诱导单晶氧化钇稳定的氧化锆中的位错和空位的产生。
6. Reply to Domene and Furini: Distinguishing knock-on and vacancy diffusion mechanisms [O] . Morten Ø. Jensen, David W. Borhani, Kresten Lindorff-Larsen, 2010

机译：回复Domene和Furini：区分连锁和空位扩散机制
7. Dislocation dynamics formulation for self-climb of dislocation loops by vacancy pipe diffusion [O] . Xiaohua Niu, Yejun Gu, Yang Xiang 2019

机译：空缺管道扩散的错位循环循环循环脱位动力学制定
8. Effects of Simultaneous Phosphorus and Arsenic Diffusions on Emitter Push and Dislocation Generation [R] . Saka, P. M., Holm-Kennedy, J. W. 1983

机译：同时磷和砷扩散对发射极推压和位错产生的影响

Reply to ``Comments on `Diffusion in Silicon I‐III and Generation of Excess Vacancies by Motions of Diffusion‐Induced Dislocations' ''

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