Alkaline‐metals‐silicon Schottky barriers

摘要

The Schottky barrier heights at the interface between metallic alkaline metals and vacuum‐cleaved n‐type Si have been found to be 0.46±0.03 and 0.43±0.03 eV, respectively, for potassium and cesium. The Cs‐p‐Si contact has presented a barrier height of 0.57±0.03 eV. The barrier height was determined from measurements of the reverse or forward current‐voltage characteristic of Schottky diodes in a vacuum of 10-7 or 10-6 Torr and at 283 or 273°K.