Determination of relevant parameters of the dopants Zn and Te from C‐T measurements in GaP |Zn,O| p‐n junctions

摘要

Using the single time constant approximation of the small ac signal capacitance of the reverse‐biased GaP |Zn,O| p‐n junction, a good agreement with the experimental C‐T dependence in the 77–110 K temperature range was found at high frequencies. The important parameters of the dopants Zn and Te‐activation energy, concentration, degree of compensation, and thermal capture coefficient‐are determined applying this model.