Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, Te, H in an amount of 1 to 4 atomic and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material

摘要

An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZnSe_1-xTe_x:H:M film, where M is a dopant of p-type or n-­type: the quantitative ratio of the Se to the Te is in the range of from 1:9 to 3:7 in terms of atomic ratio: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-­type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.