Observation of electrical breakdown and negative resistance in an epitaxial GaAs film of a field effect structure

摘要

We have observed electrical breakdown and current‐controlled negative differential resistance (NDR) in an epitaxial n‐GaAs film at room temperature by using a field effect structure. The breakdown is attributed to the impact excitation of electrons trapped in 0.9‐eV centers of concentration ∼1016 cm-3. The origin of NDR is explained by the theory which was originally developed for the breakdown phenomenon in Ge at low temperatures.