Defect structure of Cd‐doped Pb0.8Sn0.2Te

摘要

Pb0.8Sn0.2Te single crystals are equilibrated with (Pb0.8Sn0.2)x Cd1-x alloys of various compositions at 700 and 800 °C and quenched to room temperature. Cd solubility and Hall‐effect measurements as a function of the activity of Cd have led to the development of a defect model for Cd‐doped Pb0.8Sn0.2Te according to which most of the Cd is present as neutral CdxPb, a small fraction being present as positively charged Cdi compensated by negatively charged vacancies of Pb, V′Pb. The model can also be used to predict the behavior of Cd‐doped Pb0.8Sn0.2Te in Cd‐rich atmospheres and Te‐rich atmospheres.