Thyristor for use as control thyristor in thyristor system, has lattice defect zone arranged between n-doped ignition stage emitter and n-doped base, and semiconductor body with crystal lattice defect seal, which is locally added in zone

摘要

The thyristor has a semiconductor body (1), in which a p-doped emitter (8), an n-doped base (7), a p-doped base (6) and an n-doped main emitter are consecutively arranged in a vertical direction. An ignition stage (ZS1) is arranged between an ignition device and the main emitter in a lateral direction, which is perpendicular to the vertical direction. A lattice defect zone (13) is arranged between an n-doped ignition stage emitter and the n-doped base in the vertical direction. A crystal lattice defect seal of the body is locally added in the lattice defect zone. An independent claim is also included for a method for manufacturing a thyristor.