首页> 外国专利> Light-activated thyristor for e.g. switching of load, has ignition stage including conductor structure with conductor segments, which are distanced from each other and electrically contact n-doped ignition stage emitter and P-doped base

Light-activated thyristor for e.g. switching of load, has ignition stage including conductor structure with conductor segments, which are distanced from each other and electrically contact n-doped ignition stage emitter and P-doped base

机译:光激活晶闸管,例如负载切换,其点火级包括带有导体段的导体结构,导体段彼此间隔开,并与n掺杂点火级发射极和P掺杂基极电接触

摘要

The thyristor (100) has a p-doped emitter (8), an n-doped base (7), a P-doped base (6) and an n-doped main emitter (5) arranged in a vertical direction (v) in a semiconductor body (1). An ignition stage structure is arranged between an ignition device (BOD) and the main emitter and comprises an ignition stage (AG3) with an n-doped ignition stage emitter (53). The ignition stage has a conductor structure (43) with conductor segments (M3), which are distanced from each other. The conductor segments electrically contact the n-doped ignition stage emitter and the P-doped base. An independent claim is also included for a switch arrangement including a control connecting device.
机译:晶闸管(100)具有沿垂直方向(v)排列的p型掺杂的发射极(8),n型掺杂的基极(7),P型掺杂的基极(6)和n型掺杂的主发射极(5)。在半导体本体(1)中。点火级结构布置在点火装置(BOD)和主发射器之间,并且包括具有n掺杂的点火级发射器(53)的点火级(AG3)。点火级具有导体结构(43),导体结构(43)具有彼此隔开的导体段(M3)。导体段电接触n掺杂的点火级发射极和P掺杂的基极。对于包括控制连接装置的开关装置也包括独立权利要求。

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