Bipolar power semiconductor component e.g. power thyristor, has semiconductor body in vertical direction and strongly p-doped zones of n-doped gate are spaced, and are reached through n-gate

摘要

The component has a semiconductor body (1) in vertical direction (v), a p-doped emitter (8), an n-doped base (7), a p-doped base (6) and an n-doped main emitter (5). The p-doped emitter has a several strongly p-doped zones (82) with a locally increased p-doping. The strongly p-doped zones of the n-doped base are spaced, where the strongly p-doped zones are reached through the n-base. An independent claim is also included for a method for production of a bipolar power semiconductor component includes initiating a semiconductor body in a vertical direction.