The stress‐enhanced diffusion of boron in silicon

摘要

The stress effect on diffusion of impurities in the fabrication of silicon avalanche photodiodes was found when thick diffusion masks of SiO2 were used. The observation of the avalanche multiplication profile showed that nonuniform diffusion occurs over the window area of the mask. From the qualitative analysis, it is concluded that the diffusion coefficient is represented by the sum of the zero‐stress term and the stress‐induced term.