Argon‐implanted semi‐insulating layer GaAs capacitors

摘要

Capacitance‐voltage and current‐voltage measurements have been performed on metal‐semiconductor structures in which the n‐GaAs semiconductor was bombarded with 1014 cm-2 30‐keV Ar+ ions prior to the gate metalization. The data indicate that the Fermi level is pinned with a resultant barrier height of 0.75 eV. The capacitance measurements have been interpreted by assuming an intermediate dielectric layer between the metal gate and semiconductor, and the surface‐state charge density is estimated to be 1012 cm-2 eV-1.