Interpretation of the conductance and capacitance frequency dependence of hydrogenated amorphous silicon Schottky barrier diodes

摘要

We present a general model of the frequency dependence of conductance and capacitance in a‐Si:H Schottky diodes. In order to circumvent several questionable assumptions required in the analysis of capacitance voltage characteristics, the frequency dependence of sputtered a‐Si:H devices is measured with no applied dc voltage. We obtain independent, consistent values of the depletion width and of the density of states at the Fermi level and below from both conductance and capacitance at both low and high modulation frequencies. We show that the linear frequency dependence of conductance cannot be attributed to hopping conductance, but rather to the interaction of gap states with free carriers. Our study shows that the interaction kinetics of the states around the Fermi level with the conduction‐band carriers is so fast that the response of the diode is limited by the band transport of these carriers, which rapidly thermalize and distribute themselves through the continuum of states from the conduction band to the Fermi level.