Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers

摘要

InGaAsP/InP buried‐heterostructure lasers with a stripe width of 1–2 μm have been fabricated by two‐step liquid phase epitaxy and preferential chemical etching. They operate in the fundamental transverse mode at wavelengths of ∼1.3 μm with threshold current as low as 22 mA. The temperature limit for cw operation is 80 °C.