New fabrication method for high frequency InP/InGaAsP buried heterostructure semiconductor lasers

摘要

A process that permits the controllable fabrication of buried heterostructure (BH) lasers with >1.0 mu m wide active layers and 0.1-0.2 mu m of lateral cladding and achieves the high photon densities and low parasitics necessary for high resonance frequency and modulation bandwidth lasers is described. The process may be used with bulk heterostructure, quantum well, and distributed feedback (DFB) grated structures. Control of critical dimensions to +or-0.1 mu m can be realized using the process. The process development for fabrication of a 1.3 mu m or 1.5 mu m wavelength high frequency laser is discussed.