Specific contact resistance for alloyed Au‐Zn contacts on p‐type GaxIn1-xPyAs1-y

摘要

The specific contact resistance for a pulse plated and alloyed Au‐Zn (16 at. % Zn) contact on p‐type Ga0.28In0.72P0.39As0.61 was found to be 3.60.4×10-5 Ω cm2. Results of Rutherford backscattering measurements with 1.8‐MeV 4He+ showed that the alloyed Au moved only ∼1500 Å into the quaternary layer, while In and GaAs were displaced to the surface.