Calculation of the threshold voltage of metal‐oxide‐semiconductor field‐effect transistors with Pearson‐IV channel doping profile

摘要

In this paper, a general analytical expression for the calculation of threshold voltage of an ion‐implanted n‐channel enhancement‐mode metal‐oxide‐semiconductor field‐effect transistor with a Pearson‐IV channel dopant distribution is presented. Specifically, the threshold voltage in excess of the flat‐band voltage is characterized as an explicit function of the four moments about the mean depth of the dopant distribution, namely, projected range, standard deviation, skewness, and kurtosis. The effects of substrate doping concentration, implant dose, and the body effect on the threshold voltage are also presented.