Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO2

摘要

160‐nm polycrystalline silicon films were implanted at room temperature with 100‐keV silicon ions and subsequently annealed. The final grain size was found to increase with implant dose. A model is presented here to account for the dose dependence of the grain size. Three mechanisms were presumed to account for the final grain size: statistical variations of area coverage by the implanted ions, ion channeling, and spontaneous nucleation. Model parameters were successfully fit to the experimental data.