Low‐temperature grain growth of initially 〈100〉 textured polycrystalline silicon films amorphized by silicon ion implantation with normal incident angle

摘要

〈100〉 textured polycrystalline silicon films deposited by low pressure chemical vapor deposition at 700 °C on SiO2/Si substrates have been amorphized by implantation with 100 keV 28Si+ ion at a dose of 2×1015/cm2 and thermally annealed at 550 °C for 168 h. In a 0.15‐μm‐thick film, the larger grain growth (1.5 μm) occurred, and the 〈100〉 oriented grains were found. This fact implies a possibility of the 〈100〉 oriented and large silicon grains formation by seed selection through ion channeling technique even if the 〈100〉 textured polycrystalline silicon film with relatively small channeling yields is utilized.