Studies on n‐CdTe/p‐CuInSe2 heterojunctions

摘要

n‐CdTe/p‐CuInSe2 heterojunctions were fabricated by flash evaporating p‐CuInSe2 on indium‐doped CdTe single crystals. I‐V characteristics and the photospectral response of the heterojunctions were studied. On illumination appreciable change in the I‐V characteristics and photovoltaic effects were observered. A theoretical energy‐band diagram for the heterojunction was constructed, and the theoretical and experimental barrier potentials were compared.