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机译:GE / Si量子点中的近红外光响应通过铝纳米铝支撑的局部表面等离子体增强
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Science 630090 Novosibirsk Russia Department of Physics Tomsk State University 634050 Tomsk Russia;
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Science 630090 Novosibirsk Russia;
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Science 630090 Novosibirsk Russia Department of Physics Novosibirsk State University 630090 Novosibirsk Russia;
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Science 630090 Novosibirsk Russia Department of Physics Novosibirsk State University 630090 Novosibirsk Russia;
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Science 630090 Novosibirsk Russia Department of Physics Novosibirsk State University 630090 Novosibirsk Russia;
机译:Ag / SiOx:a-Si QDs / Ag三明治纳米结构中局部表面等离激元极化子对非晶硅量子点发光器件的等离激元增强光致发光
机译:Ag / SiOx:a-Si QDs / Ag三明治纳米结构中局部表面等离激元极化子对非晶硅量子点发光器件的等离激元增强光致发光
机译:量子点封顶的金纳米粒子局部表面等离子体共振增强量子点发光二极管
机译:Ag / SiO
机译:通过利用外延Ag岛的局部表面等离激元来增强Ge量子点的光致发光。
机译:通过局部表面等离子体激元和表面粗糙化增强嵌入的Si量子点/ SiO2多层薄膜的电致发光
机译:通过优化MgO层间厚度从ZnO量子点基/ GaN异质结二极管中装饰银的局部表面等离子体增强紫外电致发光