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机译:大型压电系数与Janus Monolayer XTEL的高电子迁移率相结合(X = SB和BI):一项研究
School of Electronic Engineering Xi'an University of Posts and Telecommunications Xi'an 710121 China Key Laboratory of Advanced Semiconductor Devices and Materials Xi'an University of Posts and Telecommunications Xi'an 710121 China;
School of Electronic Engineering Xi'an University of Posts and Telecommunications Xi'an 710121 China;
School of Electronic Engineering Xi'an University of Posts and Telecommunications Xi'an 710121 China;
School of Electronic Engineering Xi'an University of Posts and Telecommunications Xi'an 710121 China;
机译:Janus SB_2SE_2TE Monolayers的压电性:第一原理研究
机译:单层Janus MoSTe相的电子,振动,弹性和压电性质:第一性原理研究
机译:单层Janus MOTEE阶段的电子,振动,弹性和压电性能:一项研究
机译:从未掺杂的Bi / sub 0.96 / Sb / sub 0.04 /合金中的电磁系数确定载流子迁移率和密度
机译:第一性原理研究半导体表面的电子结构和光学特性的统一方法,用于精确计算量子角动量的耦合系数。
机译:从第一性原理计算得出六角形M2C3(M = AsSb和Bi)单层的热电性质
机译:大型压电系数与Janus Monolayer Xtei的高电子迁移率相结合(X = SB和BI):第一原理研究