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机译:IngaAs / AIAS / GAAS变质不对称间隔层隧道(MASPAT)用于微波和毫米波检测的二极管
School of Electrical and Electronic Engineering The University of Manchester Sackville Street Manchester M13 9PL United Kingdom;
School of Electrical and Electronic Engineering The University of Manchester Sackville Street Manchester M13 9PL United Kingdom;
School of Electrical and Electronic Engineering The University of Manchester Sackville Street Manchester M13 9PL United Kingdom;
School of Electrical and Electronic Engineering The University of Manchester Sackville Street Manchester M13 9PL United Kingdom;
School of Electrical and Electronic Engineering The University of Manchester Sackville Street Manchester M13 9PL United Kingdom;
School of Electrical and Electronic Engineering The University of Manchester Sackville Street Manchester M13 9PL United Kingdom;
机译:具有不对称间隔层的隧道二极管,用作微波检测器
机译:金属有机气相外延生长的InP基InGaAs / AIAs谐振隧穿二极管中的极高峰值电流密度,超过1×10〜6 A / cm〜2
机译:高性能InP / InGaAs共集成的变质异质结构双极和场效应晶体管,具有伪晶基发射极隔离层和沟道层
机译:GaAs衬底上的InGaAs / AlAs变质不对称间隔隧道(mASPAT)二极管,用于微波/毫米波应用
机译:大功率近谐振1.55微米发射InGaAsP / InP反导二极管激光器阵列。
机译:变质InAs / InGaAs / GaAs量子点异质结构光电压中的双极效应:光敏器件的表征和设计解决方案
机译:从GaMnAs层将空穴自旋注入GaAs-AlAs-InGaAs共振隧穿二极管
机译:单片二维表面发射应变层InGaas / alGaas和alInGaas / alGaas二极管激光器阵列,具有超过50%的差分量子效率