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Optical properties of single crystalline copper iodide with native defects: Experimental and density functional theoretical investigation

机译:具有固有缺陷的单晶碘化铜的光学性质:实验和密度泛函理论研究

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摘要

Copper iodide (CuI) is an attractive transparent p-type semiconductor, and we investigated the relationship between the optical property and native defects in CuI using experimental and theoretical studies. To exclude neither surface impurity nor interface strain, we used well-defined CuI single crystals with native defects, i.e., Cu-rich CuI and I-rich CuI, as well as highly pure CuI, which were prepared by post-annealing treatment of the CuI single crystal under controlled atmosphere. The optical absorption and photoluminescence (PL) properties of these samples were then carefully evaluated. Consequently, two absorption signals (AB1: 2.9 eV, AB2: 2.7 eV) and two PL peaks (PL1: 2.9 eV, PL2: 1.8 eV) were observed. The AB1, AB2, and PL1 signals were obvious under I-rich conditions, whereas the PL2 signal was dominant in the Cu-rich sample. To discuss the origin of these absorption and PL signals, we calculated the absorption and emission energies of defects in CuI using the density function theory (DFT). As a result, AB1 and PL1 are assigned to the transition and recombination between copper vacancy (V-Cu) and conduction band, while PL2 is assigned to the recombination from the iodine vacancy (V-I) to the valence band. Most interestingly, AB2 is presumed to be due to the transition from the valence band to antisites of iodine substituted for copper (I-Cu), which can be reasonably explained by the off-center model of substituted iodine ions. This work will contribute to developing and understanding optoelectrical devices using CuI. Published under license by AIP Publishing.
机译:碘化铜(CuI)是一种有吸引力的透明p型半导体,我们通过实验和理论研究研究了光学性质与CuI固有缺陷之间的关系。为了既不排除表面杂质也不排除界面应变,我们使用定义明确的具有天然缺陷的CuI单晶,即富CuI和富I CuI以及高纯度CuI,它们是通过对Al2O3进行后退火处理而制备的。受控气氛下的CuI单晶。然后仔细评估这些样品的光吸收和光致发光(PL)特性。因此,观察到两个吸收信号(AB1:2.9eV,AB2:2.7eV)和两个PL峰(PL1:2.9eV,PL2:1.8eV)。在富含I的条件下,AB1,AB2和PL1信号很明显,而富含Cu的样品中PL2信号占主导。为了讨论这些吸收和PL信号的起源,我们使用密度函数理论(DFT)计算了CuI中缺陷的吸收和发射能量。结果,AB1和PL1被分配给铜空位(V-Cu)和导带之间的过渡和复合,而PL2被分配给从碘空位(V-1)到价带的复合。最有趣的是,AB2被认为是由于从价带到碘取代铜的反位点(I-Cu)的过渡,这可以用取代碘离子的偏心模型合理地解释。这项工作将有助于开发和理解使用CuI的光电器件。由AIP Publishing授权发布。

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  • 来源
    《Journal of Applied Physics》 |2019年第11期|115101.1-115101.10|共10页
  • 作者单位

    Tokyo Inst Technol, Dept Mat Sci & Engn, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan;

    Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan|Samsung Elect, Semicond R&D Ctr, 1 Samsungjeonja Ro, Hwaseong Si 18448, Gyeonggi Do, South Korea;

    Tokyo Inst Technol, Dept Mat Sci & Engn, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan;

    Tokyo Inst Technol, Dept Mat Sci & Engn, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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