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METHOD OF IDENTIFYING CRYSTAL DEFECT REGION IN CRYSTALLINE SILICON USING COPPER HAZE AND COPPER SOLUTION FOR IDENTIFYING CRYSTAL DEFECT REGION
METHOD OF IDENTIFYING CRYSTAL DEFECT REGION IN CRYSTALLINE SILICON USING COPPER HAZE AND COPPER SOLUTION FOR IDENTIFYING CRYSTAL DEFECT REGION
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机译:用铜雾度和铜溶液识别晶体硅中的晶体缺陷区的方法
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摘要
A method for identifying a crystal defect region in a single crystal silicon by using copper haze and a copper contamination liquid are provided to conveniently identify the crystal defect region by remarkably increasing an amount of Cu contamination and then heat-treating a surface of a sample. A sample obtained from one piece of a singly crystal silicon ingot or a silicon wafer is prepared(S22). One surface of the sample is applied by a copper contamination liquid mixed with a buffered oxide etchant liquid and Cu to contaminate the surface, and then is dried(S26). The dried sample is heat-treated, and then the contaminated surface of the sample or an opposite surface of the contaminated surface is visually observed to identify the crystal defect region.
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