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Optical properties of single crystalline copper iodide with native defects: Experimental and density functional theoretical investigation

机译:具有天然缺陷的单晶铜碘化物的光学性质:实验和密度功能理论研究

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摘要

Copper iodide (CuI) is an attractive transparent p-type semiconductor, and we investigated the relationship between the optical property and native defects in CuI using experimental and theoretical studies. To exclude neither surface impurity nor interface strain, we used well-defined CuI single crystals with native defects, i.e., Cu-rich CuI and I-rich CuI, as well as highly pure CuI, which were prepared by post-annealing treatment of the CuI single crystal under controlled atmosphere. The optical absorption and photoluminescence (PL) properties of these samples were then carefully evaluated. Consequently, two absorption signals (AB1: 2.9 eV, AB2: 2.7 eV) and two PL peaks (PL1: 2.9 eV, PL2: 1.8 eV) were observed. The AB1, AB2, and PL1 signals were obvious under I-rich conditions, whereas the PL2 signal was dominant in the Cu-rich sample. To discuss the origin of these absorption and PL signals, we calculated the absorption and emission energies of defects in CuI using the density function theory (DFT). As a result, AB1 and PL1 are assigned to the transition and recombination between copper vacancy (V-Cu) and conduction band, while PL2 is assigned to the recombination from the iodine vacancy (V-I) to the valence band. Most interestingly, AB2 is presumed to be due to the transition from the valence band to antisites of iodine substituted for copper (I-Cu), which can be reasonably explained by the off-center model of substituted iodine ions. This work will contribute to developing and understanding optoelectrical devices using CuI. Published under license by AIP Publishing.
机译:铜碘化铜(CUI)是一种吸引力的透明p型半导体,我们使用实验和理论研究调查了CUI中的光学性质和天然缺陷之间的关系。为了排除表面杂质和界面应变,我们使用了具有天然缺陷的明确定义的崔单晶,即富含Cu的崔和富含浓性,以及通过后退火治疗制备的高纯Cui崔单晶在受控气氛下。然后仔细评估这些样品的光学吸收和光致发光(PL)性质。因此,观察了两个吸收信号(AB1:2.9eV,AB2:2.7eV)和两个PL峰(PL1:2.9eV,PL2:1.8eV)。 AB1,AB2和PL1信号在富含I的条件下显而易见,而PL2信号在富含Cu的样品中显着。为了讨论这些吸收和PL信号的起源,我们使用密度函数理论(DFT)计算了CUI缺陷的吸收和排放能量。结果,AB1和PL1被分配给铜空型(V-Cu)和导带之间的过渡和重组,而PL2被分配给从碘空位(V-I)的重组到价带。最有意义地,AB2被认为是由于从价带转变为取代铜(I-Cu)取代的碘的反腐蚀,这可以通过取代的碘离子的偏心模型合理地解释。这项工作将有助于使用CUI开发和理解光电设备。通过AIP发布在许可证下发布。

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  • 来源
    《Journal of Applied Physics》 |2019年第11期|115101.1-115101.10|共10页
  • 作者单位

    Tokyo Inst Technol Dept Mat Sci & Engn Meguro Ku 2-12-1 Ookayama Tokyo 1528552 Japan;

    Natl Inst Mat Sci Int Ctr Mat Nanoarchitecton 1-1 Namiki Tsukuba Ibaraki 3050044 Japan|Samsung Elect Semicond R&D Ctr 1 Samsungjeonja Ro Hwaseong Si 18448 Gyeonggi Do South Korea;

    Tokyo Inst Technol Dept Mat Sci & Engn Meguro Ku 2-12-1 Ookayama Tokyo 1528552 Japan;

    Tokyo Inst Technol Dept Mat Sci & Engn Meguro Ku 2-12-1 Ookayama Tokyo 1528552 Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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