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Thermoelectric properties of monolayer Sb_2Te_3

机译:单层Sb_2Te_3的热电性能

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摘要

The successful demonstration of monolayer films as promising thermoelectric materials highlights alternative strategies to nanostructuring for achieving high thermoelectric efficiency. Due to this reason, the electronic structure and thermoelectric properties of the monolayer Sb2Te3 are studied by using the density functional theory and the semiclassical Boltzmann transport equation. The dynamical stability of the monolayer Sb2Te3 can be guaranteed by the absence of imaginary frequencies in the phonon band structure. The monolayer Sb2Te3 can reduce the lattice thermal conductivity. The Seebeck coefficient S of the p-type monolayer Sb2Te3 is almost three times as high as those of the n-type monolayer Sb2Te3. The power factor for p-type doping is significantly larger than that for the n-type doping. Our calculated ZT values for the monolayer Sb2Te3 are far higher than those of nano-materials Sb2Te3, bulk Sb2Te3, and the eutectic PbTe-Sb2Te3 composites, indicating that the thermoelectric performance of low-dimensional structure is indeed superior. Published by AIP Publishing.
机译:单层膜作为有前途的热电材料的成功展示突出了实现高热电效率的纳米结构替代策略。因此,利用密度泛函理论和半经典玻尔兹曼输运方程研究了单层Sb2Te3的电子结构和热电性能。单层Sb2Te3的动态稳定性可以通过在声子能带结构中不存在虚数频率来保证。单层Sb 2 Te 3可以降低晶格热导率。 p型单层Sb2Te3的塞贝克系数S几乎是n型单层Sb2Te3的塞贝克系数S的三倍。 p型掺杂的功率因数明显大于n型掺杂的功率因数。我们计算出的单层Sb2Te3的ZT值远高于纳米材料Sb2Te3,块状Sb2Te3和共晶PbTe-Sb2Te3复合材料的ZT值,这表明低维结构的热电性能确实优越。由AIP Publishing发布。

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