首页> 外国专利> BLACK PHOSPHOROUS ATOMIC MONOLAYER DEPOSITION, THERMOELECTRIC MATERIAL, AND THERMOELECTRIC CONVERSION ELEMENT

BLACK PHOSPHOROUS ATOMIC MONOLAYER DEPOSITION, THERMOELECTRIC MATERIAL, AND THERMOELECTRIC CONVERSION ELEMENT

机译:黑色磷原子单分子膜沉积,热电材料和热电转换元素

摘要

PROBLEM TO BE SOLVED: To provide a black phosphorus atomic monolayer deposition which is useful as a thermoelectric conversion material, which is excellent in thermoelectric conversion performance, and which has an extended crystal structure capable of modulating the thermoelectric conversion performance corresponding to the degree of extension, and to provide the thermoelectric conversion material with high output of thermoelectric conversion and capable of modulating the thermoelectric conversion performance, and a thermoelectric conversion element.SOLUTION: A black phosphorus atomic monolayer deposition has a crystal structure extended by 2-10% to at least one direction of a zigzag axis or an arm chair axis relative to a unit cell in an unextended black phosphorus atomic monolayer deposition.SELECTED DRAWING: None
机译:解决的问题:提供一种黑磷原子单层沉积物,其用作热电转换材料,其具有优异的热电转换性能,并具有能够根据延伸程度调节热电转换性能的扩展晶体结构。解决方案:黑磷原子单层沉积的晶体结构至少扩展了2-10%,且至少具有2-10%的晶体结构。该热电转换材料具有高的热电转换输出能力和可调节的热电转换性能。在未扩展的黑磷原子单层沉积中,相对于晶胞的曲折轴或扶手椅轴的一个方向。

著录项

  • 公开/公告号JP2017214226A

    专利类型

  • 公开/公告日2017-12-07

    原文格式PDF

  • 申请/专利权人 TOKYO UNIV OF SCIENCE;

    申请/专利号JP20140209402

  • 发明设计人 YAMAMOTO TAKAHIRO;

    申请日2014-10-10

  • 分类号C01B25/02;H01L35/22;H01L35/32;H01L35/34;H01L29/06;H02N11;

  • 国家 JP

  • 入库时间 2022-08-21 13:10:06

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