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首页> 外文期刊>Journal of Applied Physics >Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectrics
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Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectrics

机译:层间和层内低k电介质随时间变化的介电击穿的简单模型

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摘要

A simple physical model is applied to time-dependent dielectric breakdown failure in ultralow-k(k=23) interlevel dielectrics. The model assumes that failure depends on the probability that an electron will have enough energy to damage the dielectric as it is accelerated in an electric field. It is seen that the characteristic form of the dependence of failure time on voltage or electric field is primarily dependent on the probability of having sufficient energy and not on the precise physical mechanism causing damage. An argument for a log-normal-like failure distribution is also presented.
机译:将一个简单的物理模型应用于超低k(k = 23)层间电介质中随时间变化的电介质击穿失败。该模型假设失效取决于电子在电场中加速时将具有足够的能量来破坏电介质的可能性。可以看出,故障时间对电压或电场的依赖性的特征形式主要取决于具有足够能量的可能性,而不取决于引起损坏的精确物理机制。还提出了类似对数正态的故障分布的论点。

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