One-dimensional postwetting layer in lnGaAs/GaAs(100) quantum-dot chains

摘要

Long chains of quantum dots formed in InGaAs/GaAs(100) multiple layers have been systematically investigated by scanning electron, transmission electron, and atomic force microscopies. In addition to the usual two-dimensional wetting layer involved in the Stranski-Krastanov growth, we have directly observed a one-dimensional postwetting layer along the [01-1] direction that strings together the quantum dots in each chain. In sharp contrast with the two-dimensional wetting layer, which exists before the quantum-dot chains form, this one-dimensional postwetting layer develops during the GaAs capping of the existing dot chains. This one-dimensional layer forms through the anisotropic surface diffusion of In atoms that accompanies the change in strain profile during capping and therefore produces the steady-state material distribution that includes a one-dimensional postwetting layer as a result.