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GaAs GaAs Layered GaAs manufacturing method thereof and exfoliated GaAs nanosheet therefrom

机译:GaAs GaAs的层状GaAs的制造方法以及由其剥离的GaAs纳米片

摘要

The present invention relates to a layered GaAs, a method for manufacturing the same, and a GaAs nanosheet peeled from the same, and more particularly, unlike a conventional bulk GaAs, the present invention has a two-dimensional crystal structure and has excellent peelability to peel off in the form of a nanosheet. The present invention relates to a layered GaAs having easy electrical properties and having excellent electrical properties by having a structure in which charge transfer is easy in an in-plane direction.
机译:层状GaAs及其制造方法和从其剥离的GaAs纳米片技术领域本发明涉及层状GaAs及其制造方法和从其剥离的GaAs纳米片,更具体地说,与常规的块状GaAs不同,本发明具有二维晶体结构并且具有优异的剥离性。以纳米片的形式剥离。本发明涉及一种层状GaAs,其通过具有在面内方向上电荷转移容易的结构而具有容易的电特性并且具有优异的电特性。

著录项

  • 公开/公告号KR102057700B1

    专利类型

  • 公开/公告日2019-12-19

    原文格式PDF

  • 申请/专利权人 연세대학교 산학협력단;

    申请/专利号KR20180057449

  • 发明设计人 심우영;최상진;김혜수;

    申请日2018-05-18

  • 分类号C30B29/68;C30B29/42;

  • 国家 KR

  • 入库时间 2022-08-21 11:08:14

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