Determination of the d_(31) piezoelectric coefficient of PbZr_xTi_(1-x)O_3 thin films using multilayer buckled micromembranes

摘要

The aim of this paper consists in the determination of the piezoelectric transverse coefficient d_(31) of PbZr_xTi_(1-x)O_3 (PZT) thin films integrated in dedicated multilayer silicon-based micromembranes exhibiting an initial buckled profile. An analytical model specific to this configuration was built and used for the calculation of d_(31) starting with the static profiles of the microfabricated devices determined by means of a double-beam interferometer. The influence of dc voltage and buckling effects on the d_(31) piezoelectric coefficient at the microscale were investigated, and high values were obtained, from 30 to 75 pm/V, within a hysteresyslike cycle. These results demonstrated the good electrical behavior of PZT thin films at the microscale with a low influence of buckling effects and determined optimal operation conditions for high values of d_(31).