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First-principles study of the effects of polytype and size on energy gaps in SiC nanoclusters

机译:第一性原理研究多晶型和尺寸对SiC纳米团簇能隙的影响

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摘要

We have studied the band-gap variation and stability energy in silicon carbide (SiC) nanoclusters of different polytypes using density functional theory (DFT) based on a gradient-corrected approximation. We have obtained a series of spherical SiC nanoclusters with dimensions up to 2 nm from bulk 2H, 3C, and 4H polytype crystals. All clusters with diameters smaller than 1 nm exhibit similar energy-gap-size variations, while energy gaps for clusters larger than 1 nm show a distinct size dependence with different polytypes and approach their bulk gaps with an increase in cluster size. In contrast to their bulk behavior, the binding energy difference between polytypes of clusters within the diameter range 0.5 nm-2 nm is found to be negligible, suggesting that the problems associated with the synthesis of polytypes of SiC in bulk may disappear for small clusters. The convergence of the energy gap and binding energy with different polytypes at small size clusters and the transition between the clusters to bulk behavior in SiC systems could be exploited for making future nano-optoelectronics devices.
机译:我们已经使用基于梯度校正近似的密度泛函理论(DFT)研究了不同多型碳化硅(SiC)纳米簇中的带隙变化和稳定能。我们从块状2H,3C和4H多型晶体中获得了一系列尺寸最大为2 nm的球形SiC纳米簇。直径小于1 nm的所有团簇都显示出相似的能隙尺寸变化,而大于1 nm的团簇的能隙表现出不同的多型体明显的尺寸依赖性,并且随着团簇尺寸的增加而接近其体隙。与它们的整体行为相反,发现直径范围在0.5 nm-2 nm的多型团簇之间的结合能差可忽略不计,这表明与小块团簇合成SiC多型团有关的问题可能会消失。 SiC系统中能隙和结合能与不同多型体的结合能以及SiC系统中团簇之间向本体行为的过渡可用于制造未来的纳米光电器件。

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