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首页> 外文期刊>Journal of Applied Physics >Effect of growth temperature on the magnetic, microwave, and cation inversion properties on NiFe_2O_4 thin films deposited by pulsed laser ablation deposition
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Effect of growth temperature on the magnetic, microwave, and cation inversion properties on NiFe_2O_4 thin films deposited by pulsed laser ablation deposition

机译:生长温度对脉冲激光烧蚀沉积NiFe_2O_4薄膜的磁性,微波和阳离子转化特性的影响

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摘要

First principles band structure calculations suggest that the preferential occupation of Ni~(2+) ions on the tetrahedral sites in NiFe_2O_4 would lead to an enhancement of the exchange integral and subsequently the Neel temperature and magnetization. To this end, we have deposited NiFe_2O_4 films on MgO substrates by pulsed laser deposition. The substrate temperature was varied from 700 to 900℃ at 5 mTorr of O_2 pressure. The films were annealed at 1000℃ for different times prior to their characterization. X-ray diffraction spectra showed either (100) or (111) orientation with the spinel structure dependent on the substrate orientation. Magnetic studies showed a magnetization value of 2.7 kG at 300 K. The magnetic moment was increased to the bulk value as a result of postdeposition annealing at 1000℃. The as produced films show that the ferromagnetic resonance linewidth at 9.61 GHz was 1.5 kOe, and it was reduced to 0.34 kOe after postannealing at 1000℃. This suggests that the annealing led to the redistribution of Ni~(2+) ions to their equilibrium octahedral sites. Further, it is shown that the magnetically preferred direction of H_a can be aligned perpendicular to the film plane when films are grown with a fixed oxygen pressure of 5 mTorr for films deposited at 700 and 900℃.
机译:第一性能带结构计算表明,NiFe_2O_4的四面体位点优先占据Ni〜(2+)离子会导致交换积分的增加,进而提高Neel温度和磁化强度。为此,我们已经通过脉冲激光沉积在MgO衬底上沉积了NiFe_2O_4膜。在5 mTorr的O_2压力下,基板温度从700到900℃不等。在表征之前,将膜在1000℃退火不同的时间。 X射线衍射光谱显示(100)或(111)取向,尖晶石结构取决于基底取向。磁性研究表明,在300 K时的磁化值为2.7 kG。由于在1000℃下进行了后退火,磁矩增加到整体值。所产生的膜表明,在9.61GHz下的铁磁共振线宽为1.5kOe,并且在1000℃的后退火之后降低到0.34kOe。这表明退火导致Ni〜(2+)离子重新分布到其平衡的八面体位置。此外,显示了当在700和900℃下沉积的膜以5mTorr的固定氧气压力生长膜时,H_a的磁性优选方向可以垂直于膜平面取向。

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