The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO_2(111)/Si(111) support systems

A. Giussani; O. Seifarth; P. Rodenbach; H.-J. Muessig; P. Zaumseil; T. Weisemoeller; C. Deiter; J. Wollschlaeger; P. Storck; T. Schroeder

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The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO_2(111)/Si(111) support systems

机译：晶格氧对单晶PrO_2（111）/ Si（111）支撑体系上异质外延Ge层初始生长行为的影响

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A combined structure and stoichiometry study on the growth behavior of single crystalline Ge(111) layers on PrO_2(111)/Si(111) heterostructures is presented. Ex situ x-ray diffraction techniques indicate that the interaction between Ge and PrO_2(111) resu

机译：结合结构和化学计量学研究了单晶Ge（111）层在PrO_2（111）/ Si（111）异质结构上的生长行为。异位x射线衍射技术表明Ge和PrO_2（111）之间的相互作用

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《Journal of Applied Physics》 |2008年第8期|838-847|共10页
作者
A. Giussani; O. Seifarth; P. Rodenbach; H.-J. Muessig; P. Zaumseil; T. Weisemoeller; C. Deiter; J. Wollschlaeger; P. Storck; T. Schroeder;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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机译：生长前衬底氮化对ECR-MBE在Si（001）和Si（111）衬底上生长的GaN异质外延层初始生长过程的影响
2. Dielectric properties of single crystalline PrO_2(111)/Si(111)heterostructures: Amorphous interface and electrical instabilities [J] . O. Seifarth, Ch. Walczyk, G. Lupina, Journal of Applied Physics . 2009,第10期

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4. Heteroepitaxial Integration of Single Crystalline Ge(111) Layers on Si(111) via PrO2(111) Heterostructures [C] . A. Giussani, O. Seifarth, P. Rodenbach, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices . 2008

机译：通过PrO2（111）异质结构在Si（111）上单晶Ge（111）层的异质外延集成
5. Growth properties and reactivity of oxygen phases on platinum (111) and palladiium (111). [D] . Devarajan, Sunil Poondi. 2012

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7. The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline $PrO_{2}(111)/Si(111)$ support systems [O] . Giussani, A., Seifarth, O., Rodenbach, P., 2008

机译：晶格氧对单晶$ PrO_ {2}（111）/ Si（111）$支撑体系上异质外延Ge层初始生长行为的影响
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机译：用单能正电子研究异质外延结构中的缺陷：大晶格失配系统Cu / ag（111）和ag / Cu（111）

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO_2(111)/Si(111) support systems

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