Modification of charge compensation in semi-insulating semiconductors by high energy light ion irradiation

D. Kabiraj; Rainer Groetzschel; Subhasis Ghosh

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Modification of charge compensation in semi-insulating semiconductors by high energy light ion irradiation

机译：通过高能光离子辐照修改半绝缘半导体中的电荷补偿

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High energy light ions have been used to engineer the electrical properties of semi-insulating InP and GaAs by creation and annihilation of native defects. Due to light mass, high energy ions lose most of their energy during flight inside the material by

机译：高能轻离子已被用于通过产生和消除本征缺陷来设计半绝缘InP和GaAs的电性能。由于质量轻，高能离子在材料内部飞行时会损失大部分能量。

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《Journal of Applied Physics》 |2008年第5期|280-287|共8页
作者
D. Kabiraj; Rainer Groetzschel; Subhasis Ghosh;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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3. Different optical conductivity enhancement (OCE) protocols to eliminate charging during ultra low energy SIMS profiling of semiconductor and semi-insulating materials [J] . Morris RJH, Dowsett MG, Chang RJH Applied Surface Science . 2006,第19期

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4. High Energy Light Ion (HELI) Irradiation: Is it a novel method for material modification and defect engineering in semiconductors? [C] . D. Kabiraj, Subhasis Ghosh International Workshop on the Physics of Semiconductor Devices . 2007

机译：高能光离子（HELI）辐照：是半导体中材料改性和缺陷工程的新方法吗？
5. Modification and characterization of a high-energy photon irradiation facility using nitrogen-16. [D] . Roy, Tapash Kumar. 2003

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Modification of charge compensation in semi-insulating semiconductors by high energy light ion irradiation

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