Coulomb effects and carrier diffusion in semiconductor quantum wires

摘要

We have solved in space and time the effective-mass nonlinear Schrodinger equation for an electron-hole gas in a semiconductor quantum wire. If the carrier density is large enough, we have obtained the diffusion of coupled electron and hole densities considering a Coulomb interaction between both electron-hole gases. In this way, we have shown the possibility of having an inverse Mott transition in a quantum wire after an optical excitation of the sample.