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Regular semiconductor material island array for a Coulomb blocking type quantum device, e.g. a memory or a logic circuit

机译:用于库仑阻挡型量子器件的常规半导体材料岛阵列,例如。存储器或逻辑电路

摘要

An array of semiconductor material islands (124) is formed on uniformly distributed nucleation seeds (122, 122a) deposited on an insulating material (112) using a distribution layer (116) of material having a regular molecular structure. Independent claims are also included for the following: (i) production of a quantum structure of Coulomb blocking type having an array of semiconductor islands formed by the above process; and (ii) a Coulomb blocking type electronic device having electron sources separated by a collection of nano-size semiconductor islands regularly spaced on an insulating substrate.
机译:使用具有规则分子结构的材料的分布层(116),在沉积在绝缘材料(112)上的均匀分布的成核种子(122、122a)上形成半导体材料岛(124)的阵列。还包括以下方面的独立权利要求:(i)生产具有通过上述方法形成的半导体岛阵列的库仑阻挡型量子结构; (ii)库仑阻挡型电子设备,其电子源由在绝缘基板上规则间隔的纳米尺寸的半导体岛的集合所隔开。

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