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Size dependent optical band gap of ternary I-III-VI_2 semiconductor nanocrystals

机译:I-III-VI_2三元半导体纳米晶体的尺寸依赖性光学带隙

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摘要

The size dependent optical band gap of the less-toxic ternary I-III-VI_2 chalcopyrite-type semiconductor quantum dots (QDs), CuInS_2, CuInSe_2, CuGaS_2, CuGaSe_2, AgInSe_2, AgGaS_2, and AgGaSe_2, were evaluated using the finite-depth-well effective mass approximation calculation. From the comparison of the calculation result with the experimental values for the CuInS_2 case, it was shown that the calculation was highly valid to predict the size dependent optical gap of the ternary semiconductor QDs. The optical band gap of the above seven I-III-VI_2 QDs covers a wide wavelength range from the near-infrared to ultraviolet. It has been shown that the I-III-VI_2 semiconductor QDs have a significant potential as alternatives to the highly toxic cadmium-containing II-VI semiconductor QDs and they are applicable to the wide range of light emitting devices and solar cells.
机译:使用有限深度法对毒性较低的三元I-III-VI_2黄铜矿型半导体量子点(QDs),CuInS_2,CuInSe_2,CuGaS_2,CuGaSe_2,AgInSe_2,AgGaS_2和AgGaSe_2的尺寸依赖性光学带隙进行了评估。有效的质量近似计算。通过将计算结果与CuInS_2情况下的实验值进行比较,表明该计算对于预测三元半导体QD的尺寸依赖性光学间隙非常有效。上述七个I-III-VI_2 QD的光学带隙覆盖了从近红外到紫外的宽波长范围。已经显示出,I-III-VI_2半导体QD具有替代高毒性含镉的II-VI半导体QD的巨大潜力,并且它们适用于广泛的发光器件和太阳能电池。

著录项

  • 来源
    《Journal of Applied Physics》 |2009年第1期|30-34|共5页
  • 作者单位

    Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita 565-0871, Japan;

    Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita 565-0871, Japan;

    Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita 565-0871, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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