机译:β-Si_3N_4(0001)/ Si(111)界面的电子结构:完美的键合和悬空键合效应
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore;
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore;
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore;
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore;
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore;
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore;
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore;
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore;
机译:钻石(111)表面的结构-单悬空粘结与三重悬空粘结面
机译:Si纳米岛和Si(111)7X7衬底上悬挂键态的电子结构
机译:ZnO(0001),CuCl(111)和Cu2O(111)3d(10)金属离子表面上的羰基键合:CO / Cu2O(111)的光电子能谱和电子结构计算
机译:第一性原理中突然出现的SiO_2 / 4H-和6H-SiC(0001)的界面态:Si悬挂键,C悬挂键和C团簇的影响
机译:石墨烯界面的电子结构缺陷和化学键合。
机译:过渡元件添加对Al(111)/ 6H-SiC(0001)界面的界面相互作用和电子结构的影响:第一原理研究
机译:悬臂债券的第一性原理电子结构计算 si / siO $ _2 $和Ge / GeO $ _2 $接口
机译:隧道光谱法研究局域化si-Dingling-Bond缺陷的电子结构